Samsung Electronics is preparing to introduce a groundbreaking achievement in DRAM manufacturing, enabling a single memory module to accommodate an impressive 1TB of DDR5 memory.

Through pioneering advancements in DRAM production, the South Korean company has successfully developed the memory industry’s first and highest-capacity 32-gigabit (Gb) DDR5 DRAM utilizing 12nm process technology.

This breakthrough empowers Samsung to manufacture 1TB DDR5 memory modules. Additionally, the transition to 32Gb DRAM yields another significant advantage—when compared to the existing 12nm-class 16Gb DDR5 DRAM, it brings about a 10% reduction in power consumption, particularly noticeable when examining 128GB modules.

SangJoon Hwang, EVP of DRAM Product & Technology at Samsung Electronics, noted that initially, major customers for this DRAM will include data centers, AI, and big data sectors. He emphasized, “With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data … We will continue to develop DRAM solutions through differentiated process and design technologies to break the boundaries of memory technology.”

Samsung anticipates commencing mass production of the 12nm-class 32Gb DDR5 DRAM by the end of 2023.

The prospect of having more memory within a reduced space and with lower power consumption will undoubtedly garner enthusiasm among data center operators. Furthermore, this innovative memory technology is expected to eventually trickle down to DDR5 modules commonly found in desktop PCs and laptops. Presently, 192GB memory kits, consisting of four modules, appear to be the high-end offering for consumers.